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1 of 12 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt v r e g 2 g n d g n d v c c 3 v r e g 3 1 2 3 4 5 1 7 1 6 1 5 1 4 1 3 2 4 2 3 2 2 2 1 v c c 2 g n d 7 v b i a s 8 g n d 9 g n d 1 0 t x i n 1 1 g n d v r e g 1 g n d 2 0 v t x g n d a n t g n d 6 v c c 1 1 2 p d o w n p d e t 1 8 r x 1 9 v r x g n d i n p u t m a t c h b i a s i n t e r s t a g e m a t c h i n t e r s t a g e m a t c h RFFM7600 5.0v, 2.5ghz to 2.7ghz high power front end module the RFFM7600 is a front end module, designed for the wimax 2.5ghz to 2.7ghz market with lte bands between 2.5ghz to 2.7ghz. it consists of a power amplifier with tx harmonic filtering and t/r switching. RFFM7600 is provided in a 6mm x 6mm laminate package, incorporatin g smd's for filtering and matching. features ? 34db typical gain across frequency band ? p out = 27dbm <2.5% evm wimax ? 2.5ghz to 2.7ghz frequency range ? p out = 24dbm, -48dbc acpr lte dl ? integrated 3-stage pa, filtering and t/r switch. ? integrated power detector and high impedance control pin applications ? wimax applications ? lte tdd application ? customer premises equipment (cpe) ? data cards and terminals ? spread-spectrum and mmds systems ds120427 ? ? package: 6mm x 6mm laminate RFFM7600 5.0v, 2.5ghz to 2.7ghz high power front end module RFFM7600pck-410 RFFM7600 eval board with 5-piece bag RFFM7600sb 5-piece bag RFFM7600sr 100-piece reel RFFM7600tr7 2500-piece reel RFFM7600sq 25-piece bag
2 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit supply voltage (rf applied) -0.5 to +5.25 v supply voltage (no rf applied) -0.5 to +6.0 v dc supply current 1000 ma a input rf power +10* dbm operating ambient temperature -30 to +85 c storage temperature -40 to +150 c moisture sensitivity msl3 *maximum input power with a 50 ? load. parameter specification unit condition min. typ. max. typical conditions t = 25c, v cc = 5v, v reg = 2.85v, p down = 2.85v; frequency 2570 2620 mhz lte band 38 compliance: lte downlink; using a 20mhz, lte dl etm1.1 waveform, unless otherwise noted. output power 24 24.5 dbm acp (adjacent channel) -48 -45 dbc at rated p out evm 3 % operating current 700 ma at p out = 24dbm quiescent current 575 ma frequency 2500 2700 mhz lte band 41 compliance: lte downlink; using a 20mhz, lte dl etm1.1 waveform, unless otherwise noted. output power 23 24 dbm acp (adjacent channel) -48 -41 dbc at rated p out evm 3 % operating current 700 ma at p out = 24dbm quiescent current 575 ma tx other compliance: lte downlink; using a 20mhz, lte dl etm1.1 waveform, unless otherwise noted. 2nd harmonic -45 -38 dbm/mhz at rated p out 3rd harmonic -50 dbm/mhz frequency 2500 2700 mhz compliance: ieee802.16e, using a 10mhz, ieee802.6e waveform, unless otherwise noted. 802.16e output power 27 dbm 25c 10mhz 802.16e mask evm 2.5 3 % gain 32 34 db gain variation -2 2 db gain in low gain/power mode 15 db v reg2 = 0v operating current 825 ma quiescent current 575 ma 2nd harmonic -43 dbm/mhz over all conditions 3rd harmonic -50 dbm/mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . RFFM7600 ? truth ? table parameter unit condition tx general spec compliance: ieee802.16e, using a 10mhz, ieee802.6e waveform, unless otherwise noted. gain 32 34 db at p out = 24dbm gain variation -2 2 db input return loss 10 15 db in specified frequency band v reg 2.82.852.9 v i reg 810 ma power detect range 0.2 2.1 v p out range of 0dbm to 30dbm p down current 11 ma v cc = 5v, v reg =2.85v, p down = 0v leakage current 0.2 0.5 ma v cc = 5v, v reg = 0v, p down = 0v turn-on time 0.4 1 ? s output stable to within 90% of final gain stability -25 30 dbm no spurs above -47dbm into 4:1 vswr no damage into output vswr 10:1 50 ? load at nominal pin max pin (ruggedness - 50 ? ) 10 dbm no damage rx spec compliance: ieee802.16e, using a 10mhz, ieee802.6e waveform, unless otherwise noted. rx insersion loss 0.7 1 db rx to ant isolation - in tx mode 26 db rx to tx isolation - in tx mode 25 db control compliance: ieee802.16e, using a 10mhz, ieee802.6e waveform, unless otherwise noted. voltage logic high 2.8 3.1 3.4 v voltage logic low 0 0.3 v control current - logic high 5 10 ? a control current - logic low 0.1 1 ? a t/r switching time 0.5 ? s other compliance: ieee802.16e, using a 10mhz, ieee802.6e waveform, unless otherwise noted. thermal resistance rth_j 14 c/w esd human body model 500 v eia/jesd22-114a rf pin to ground 500 v eia/jesd22-114a dc pin to ground charge device model 1000 v jesd22-c101c all pins to ground status pdown vtx vrx tx mode 11 0 rx mode 00 1
4 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pin names and descriptions pin name description 1gnd ground connection 2gnd ground connection 3 vcc3 this pin is connected internally to the collector of the 3rd stage rf device. to achieve specified perfor- mance, the layout of these pins should match the recommended land pattern. 4 vcc2 this pin is connected internally to the collector of the 2nd stage rf device. to achieve specified perfor- mance, the layout of these pins should match the recommended land pattern. 5gnd ground connection 6 vcc1 this pin is connected internally to the collector of the 1st stage rf device. to achieve specified perfor- mance, the layout of these pins should match the recommended land pattern. 7vbias supply voltage for the bias reference and control circuits. 8gnd ground connection 9gnd ground connection 10 txin rf input is internally matched to 50 ? and dc blocked. 11 gnd ground connection 12 pdown power down pin. apply <0.6v dc to power down the three power amplifier stages. apply 1.75v dc to 5.0v dc to power up. if function is not desired, pin may be connected to v reg . 13 vreg1 first stage bias voltage. this pin requires regulated supply for best performance. 14 vreg2 second stage bias voltage. this pin requires regulated supply for best performance. 15 vreg3 third stage bias voltage. this pin requires regulated supply for best performance. 16 pdet power detector provides an output voltage proportional to the rf output power level. 17 gnd ground connection 18 rx rf output is internally matched to 50 ? and dc blocked. 19 vrx switch control for rx mode 20 gnd ground connection 21 ant rf output is internally matched to 50 ? and dc blocked. 22 gnd ground connection 23 gnd ground connection 24 vtx switch control for tx mode pkg base gnd ground connection
5 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . theory of operation and applications the RFFM7600 is a single-chip integrated front end module (fem ) for high performance lte dl and wimax applications in the 2.5ghz to 2.7ghz ism band. the fem grea tly reduces the number of external comp onents minimizing footprint and assembly cost of the overall lte tdd and 802.16e solution. the RFFM7600 has an integrated linear power amplifier, a power detector, and tx filtering and a switch, which is capable of switching be tween rx and tx operations. the device is manufactured using ingap hbt and phemt processes on a 6mm x 6mm x 0.95mm lamina te package. the module meets or exceeds the rf front end needs of the lte dl and wimax rf systems. as the RFFM7600 is fully rf matched to 50 ? internally and requires minimal external components, it is very easy to implement on to pcb designs. to reduce the design and optimization process on the customer application, the evaluation board layout should be copi ed as close as possible, in particular the ground and via con- figurations. gerber files of rfmd pcba designs can be provid ed upon request. the supply voltage lines should present an rf short to the fem by using bypass capacitors on the vcc traces . to simplify bias conditions, the RFFM7600 requires a single positive supply voltage (vcc), a positive current control bias (v reg) supply or high impedance enable, and a positive supply fo r switch control. the built-in power detector of the RFFM7600 can be used as power monitor in the system. all inputs and out- puts are internally matched to 50 ? . transmit path the RFFM7600 has a typical gain of 34db from 2.5ghz to 2.7ghz, and delivers >27dbm typical output power in wimax and >24dbm typical in lte dl with acp <-45dbc the RFFM7600 requires a single positive of 5.0v to operate at full specifications. the vreg pin requires a regulated supply at 2.85v to maintain nominal bias current. out of band rejection the RFFM7600 contains a low pass filtering (lpf) to attenuat e the 2nd harmonics to -38dbm/mhz (typical). depending upon the end-user's application, additional filt ers may be needed to meet the out of ba nd rejection requirements of the system. receive path the rx path has a 50 ? single-ended port. the receive port return loss is 9.6db minimum. in this mode, the fem has an inser- tion loss of 0.8db and 30db (typical) isolation to tx port. RFFM7600 biasing instructions to the eval board: ? wimax or lte dl transmit: ? connect the fem to a signal generator at the input and a spectr um analyzer at the output. set the pin at signal generator is at -20dbm. ?bias v cc to 5.0v first with v reg = 0.0v. if available, enable the current limiting function of the power supply to 1100ma. ? refer to switch operational truth table to set the control lines at the proper levels for tx. it is recommended to maintain a t least 2.85v on vtx during tx mode. a lower vtx voltage will enable the switch in tx mode, but 2.85v is needed to ensure that the switch stays in tx mode during high power peaks. using a vtx voltage less than 2.85v in tx mode could result in abnormal operation or device damage. ?turn on v reg to 2.85v (typ.). on vreg (of eval board), regulated su pply is recommended. be extremely careful not to exceed 3.0v on the vreg pin or the part may exceed device current limits. ?turn on p down to 2.85v (typ.). pdown pin can be tied to vreg supply. note: it is important to adjust the v cc voltage source so that +5v is measur ed at the board; and the +2.85v of v reg is mea- sured at the board. the high collector currents will drop the co llector voltage significantly if long leads are used. adjust th e bias voltage to compensate. ? turn on rf of signal generator and gradually increase power level to the rated power. caution: if the input signal exceeds the maximum rated power, the RFFM7600 evaluation board can be permanently dam- aged. ? to turn off fem, turn off rf power of signal generator; then p down , v reg and v cc .
6 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ? receive ? to receive wimax or lte set the switch control lines per the truth table. general layout guidelines and considerations: for best performance the following layout guidelines and consid erations must be followed regardless of final use or configura- tion: 1. the ground pad of the RFFM7600 has special electrical an d thermal grounding requirements. this pad is the main rf ground and main thermal conduit path for heat dissipation. th e gnd pad and vias pattern and size used on the rfmd eval- uation board should be replicated. the rfmd layout files in gerber format can be provided upon request. ground paths (under device) should be made as short as possible. 2. the rf lines should be well separated with solid ground in between the traces to eliminate any possible rf leakages or cross-talking. 3. bypass capacitors should be used on the dc supply lines. the vcc lines may be connected after the rf bypass and decou- pling capacitors to provide better isolation between each vcc line. RFFM7600 tx production and system calibration recommendation: it is highly recommended to follow the dc biasing step an d rf power settings in the production calibration or test. 1. connect the rf cables of input and output then connect to the proper equipment. 2. apply v cc , then v reg as per the data sheet recommendations. 3. set fem in tx mode by the truth table. 4. apply p down = high. 5. set rf input to the desired frequency and initial rf input powe r at -20dbm. this will insure the power amplifier is in a line ar state and not over driven. 6. sweep rf from low to high output power and take measurements at the rated output power. 7. ensure that the output power at turn on does not saturate the power amplifier. the recommended output power should be about 10db to 20db below the nominal input power. start calibrating from low to high power in reasonable steps until the rated power is reached then take the measurements. caution: if the input signal exceeds the maximum rated input power specifications, the RFFM7600 could be permanently damaged.
7 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing note: thermal vias for center slug ?b? should be incorporated into the pcb design. the number and size of thermal vias will depend on the application. example of th e number and size of vias can be foun d on the rfmd evaluation board layout. pcb metal land pattern 0.000 2x 0.900 2x 1.800 7x 2.700 2x 0.900 2x 1.800 7x 2.700 7x 2.700 2x 1.800 2x 0.900 7x 2.700 2x 1.800 2x 0.900 0.000 a = 0.400 x 0.400 mm b = 4.400 x 4.400 mm a a a a a a a a a a a a a b a a a a a a a a a a a 20x 0.300 pcb stencil pattern a a a a a a a a a a a a a b a a a a a a a a a a a 7x 2.700 2x 1.800 2x 0.900 0.000 2x 0.900 2x 1.800 7x 2.700 7x 2.700 2x 1.800 2x 0.900 2x 0.900 2x 1.800 7x 2.700 3x 1.550 3x 1.550 3x 1.550 3x 1.550 a = 0.360 x 0360 mm b = 1.170 x 1.179 mm 20x 0.385 b b b b b b b b 0.000 notes n o t e s : 1. shaded area represents pin 1 location 1 . s h a d e d a r e a r e p r e s e n t s p i n 1 l o c a t i o n pcb solder mask pattern a a a a a a a a a a a a a b a a a a aa a a a a a a = 0.550 x 0.550 mm b = 4.550 x 4.550 mm 0.000 2x 0.900 2x 1.800 7x 2.700 2x 0.900 2x 1.800 7x 2.700 7x 2.700 2x 1.800 2x 0.900 7x 2.700 2x 1.800 2x 0.900 0.000 20x 0.150
8 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pin out v r e g 2 g n d g n d v c c 3 v r e g 3 1 2 3 4 5 1 7 1 6 1 5 1 4 1 3 2 4 2 3 2 2 2 1 v c c 2 g n d 7 v b i a s 8 g n d 9 g n d 1 0 t x i n 1 1 g n d v r e g 1 g n d 2 0 v t x g n d a n t g n d 6 v c c 1 1 2 p d o w n p d e t 1 8 r x 1 9 v r x g n d
9 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . RFFM7600 evaluation board top layer bottom layer
10 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic bill of materials (bom) description qty reference designator manufacturer manufacturer's p/n cap, 1000pf, 10%, 50v, x7r, 0402 1 c1 murata electronics grm155r71h102ka01d cap, 1uf, 10%, 10v, x5r, 0603 1 c4 murata electronics grm188r61a105ka61d cap, 10uf, 10%, 10v, x5r, 0805 1 c3 murata electronics rm21br61a106ke19l conn, sma, end lnch, univ, hyb mnt, flt 3 j1, j2, j3 molex sd-73251-4000 res, 20k, 5%, 1/16w, 0402 1 r1 panasonic industrial co erj-2gej203 res, 0 ohm, 0402 3 r2 kamaya, inc rmc1/16sjpth dni 2 r3, c2 RFFM7600 1 u1 rfmd RFFM7600 j1 ant pdet vreg r2 0 ? j3 txin c3 10 uf vcc p1 1 2 3 4 hdr_1x4 vcc p2 hdr_1x7 1 2 3 4 5 6 7 vreg vreg2 c4 1 uf 1 2 3 4 5 17 16 15 14 13 24 2 3 22 21 7 8 9 10 11 20 6 1 2 18 19 RFFM7600 r1 20k ? pdown j2 rx vtx vrx pdet pdown c1 1000pf vtx vrx c2 dnp vreg2 r3 dnp
11 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . performance plots -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 024681012141618202224262830 evm (%) output power (dbm) aplr (db) versus p out (dbm) - 40c v cc = 5v dc v reg = 2.85v dc e-tm1.1 with lte dl 20mhz 2500mhz 2570mhz 2570mhz 2700mhz -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 evm (%) output power (dbm) aclr (db) versus p out (dbm) 25 c v cc = 5v dc v reg = 2.85v dc e-tm1.1 with lte dl 20mhz 2500mhz 2570mhz 2620mhz 2700mhz 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 i cc (a) output power (dbm) i cc (a) versus p out (dbm) -40c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 024681012141618202224262830 i cc (a) output power (dbm) i cc (a) versus p out (dbm) 25 c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 024681012141618202224262830 i cc (a) output power (dbm) i cc (a) versus p out (dbm) 85 c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 evm (%) output power (dbm) aclr (db) versus p out (dbm) 85 c v cc = 5v dc v reg = 2.85v dc e-tm1.1 with lte dl 20mhz 2500mhz 2570mhz 2620mhz 2700mhz
12 of 12 RFFM7600 ds120427 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . performance plots 28.0 30.0 32.0 34.0 36.0 38.0 40.0 024681012141618202224262830 gain (db) output power (dbm) gain (db) versus p out (dbm) -40c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 gain (db) output power (dbm) gain (db) versus p out (dbm) 25 c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 gain (db) output power (dbm) gain (db) versus p out (dbm) 85 c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 024681012141618202224262830 p det (v) output power (dbm) power detect (v) versus p out (dbm) -40c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 p det (v) output power (dbm) power detect (v) versus p out (dbm) 25 c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 024681012141618202224262830 p det (v) output power (dbm) power detect (v) versus p out (dbm) 85 c v cc = 5v dc v reg = 2.85v dc 2500mhz 2570mhz 2620mhz 2700mhz

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